Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopyKOCH, M; VOLK, M; MEIER, T et al.Superlattices and microstructures. 1994, Vol 15, Num 3, pp 329-332, issn 0749-6036Article

Self-Catalyzed Ternary Core-Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam EpitaxyYUNYAN ZHANG; JIANG WU; AAGESEN, Martin et al.Nano letters (Print). 2014, Vol 14, Num 8, pp 4542-4547, issn 1530-6984, 6 p.Article

Effect of light-hole tunnelling on the excitonic properties of GaAsP/AlGaAs near-surface quantum wellsPAL, Suparna; SINGH, S. D; PORWAL, S et al.Semiconductor science and technology. 2013, Vol 28, Num 3, issn 0268-1242, 035016.1-035016.8Article

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observationXIUGUANG JIN; NAKAHARA, Hirotaka; SAITOH, Koh et al.Journal of crystal growth. 2012, Vol 353, Num 1, pp 84-87, issn 0022-0248, 4 p.Article

Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayersFUJII, Hiromasa; YUNPENG WANG; WATANABE, Kentaroh et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 239-244, issn 0022-0248, 6 p.Conference Paper

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devicesCOLTER, P. C; CARLIN, C. Z; SAMBERG, J. P et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 12, pp 2884-2888, issn 1862-6300, 5 p.Article

Reliability of diode lasers for space applicationsHÄUSLER, K; ZEIMER, U; SUMPF, B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7198, issn 0277-786X, isbn 978-0-8194-7444-5 0-8194-7444-4, 1Vol, 719816.1-719816.12Conference Paper

Temperature analysis of threshold current in infrared vertical-cavity surface-emitting lasersCHEN CHEN; LEISHER, Paul O; ALLERMAN, Andrew A et al.IEEE journal of quantum electronics. 2006, Vol 42, Num 9-10, pp 1078-1083, issn 0018-9197, 6 p.Article

Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base materialWU, Cheng-Hsien; SU, Yan-Kuin; CHANG, Shoou-Jinn et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp 828-832, issn 0268-1242, 5 p.Article

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wellsJIANG, D. S; BIAN, L. F; LIANG, X. G et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 336-341, issn 0022-0248, 6 p.Conference Paper

Tailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applicationsCHOY, W. C. H.IEEE journal of quantum electronics. 2000, Vol 36, Num 2, pp 164-174, issn 0018-9197Article

Application des contraintes biaxiales à l'amélioration du transport vertical des trous dans les hétérostructures = Application of biaxial strain to the enhancement of vertical hole transport in heterostructuresLampin, Jean-François; Mollot, Francis.1997, 203 p.Thesis

Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasersBALIGA, A; AGAHI, F; ANDERSON, N. G et al.IEEE journal of quantum electronics. 1996, Vol 32, Num 1, pp 29-37, issn 0018-9197Article

Analysis of current-temperature-light characteristics of GaAsP light-emitting diodesTANAKA, Y; TOYAMA, T.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 8, pp 1475-1477, issn 0018-9383Article

Strain-balanced InGaAs/GaAsP multiquantum well reflection modulator operating near 1.06 μm on GaAs and silicon substratesGOOSSEN, K. W; CUNNINGHAM, J. E; SANTOS, M. B et al.Electronics Letters. 1993, Vol 29, Num 22, pp 1985-1986, issn 0013-5194Article

Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral rangeDURAEV, V. P; MARMALYUK, A. A; PADALITSA, A. A et al.Quantum electronics (Woodbury). 2005, Vol 35, Num 10, pp 909-911, issn 1063-7818, 3 p.Article

Axial Diffusion Barriers in Near-Infrared Nanopillar LEDsSCOFIELD, Adam C; LIN, Andrew; HADDAD, Michael et al.Nano letters (Print). 2014, Vol 14, Num 11, pp 6037-6041, issn 1530-6984, 5 p.Article

Growth and testing of vertical external cavity surface emitting lasers (VECSELs) for intracavity cooling of Yb:YLFCEDERBERG, J. G; ALBRECHT, A. R; GHASEMKHANI, M et al.Journal of crystal growth. 2014, Vol 393, pp 28-31, issn 0022-0248, 4 p.Conference Paper

Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic ApplicationsGRASSMAN, Tyler J; BRENNER, Mark R; GONZALEZ, Maria et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 12, pp 3361-3369, issn 0018-9383, 9 p.Article

Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructuresALESHKIN, V. Ya; ANTONOV, A. V; KOZLOV, D. V et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4974-4976, issn 0921-4526, 3 p.Conference Paper

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device propertiesICHIKAWA, O; FUKUHARA, N; HATA, M et al.Journal of crystal growth. 2007, Vol 298, pp 85-89, issn 0022-0248, 5 p.Conference Paper

Comparison of facet temperature and degradation of unpumped and passivated facets of al-free 940-nm lasers using photoluminescenceCHAVAN, Ashonita; RADIONOVA, Radosveta; CHARACHE, Greg W et al.IEEE journal of quantum electronics. 2005, Vol 41, Num 5, pp 630-635, issn 0018-9197, 6 p.Article

Advances in Bragg stack quantum well solar cellsJOHNSON, D. C; BALLARD, I; HILL, G et al.Solar energy materials and solar cells. 2005, Vol 87, Num 1-4, pp 169-179, issn 0927-0248, 11 p.Conference Paper

A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristicsCHANGLING YAN; YONGQIANG NING; GUOQIANG CHU et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 685-689, issn 0268-1242, 5 p.Article

Statistical model for site occupation preferences and shapes of elemental tetrahedra in the zinc-blende type semiconductors GaInAs, GaAsP, ZnCdTeROBOUCH, B. V; KISIEL, A; KONIOR, J et al.Journal of alloys and compounds. 2002, Vol 339, Num 1-2, pp 1-17, issn 0925-8388Article